Electrical component and method of forming same

ABSTRACT

Various embodiments of an electrical component and a method of forming such component are disclosed. The electrical component includes a substrate having a first major surface, a second major surface, and a cavity disposed in the substrate. The cavity extends between the first major surface and the second major surface. The electrical component also includes an anode electrode that includes a conductive foil layer disposed on the second major surface of the substrate and over the cavity. Tantalum material is disposed within the cavity and includes tantalum particles. A dielectric layer is disposed on the tantalum particles, and an electrolyte cathode layer is disposed on the dielectric layer. The electrical component also includes a cathode electrode disposed over the cavity.

RELATED PATENT APPLICATION

This application claims the benefit of U.S. Provisional PatentApplication Ser. No. 63/058,904, filed on Jul. 30, 2020, which isincorporated by reference herein in its entirety.

TECHNICAL FIELD

This disclosure generally relates to electrical components. Inparticular, this disclosure relates to electrical components suitablefor use in implantable devices.

BACKGROUND

A wide variety of electronic assemblies such as those that are utilizedfor implantable medical devices (IMDs) employ electronic circuitry,e.g., for providing electrical stimulation of body tissue and/ormonitoring a physiologic condition. Such IMDs can deliver electricaltherapy energy in the form of shocking energy and stimulating pulses toselected body tissue and typically include output circuitry forproviding the electrical energy under prescribed conditions and at leastone lead bearing a stimulation electrode for delivering the electricalenergy to the selected tissue. For example, cardiac pacemakers andimplantable cardioverter-defibrillators (ICDs) have been developed formaintaining a desired heart rate during episodes of bradycardia or forapplying cardioversion or defibrillation therapies to the heart upondetection of serious arrhythmias. Other nerve, brain, muscle, and organtissue stimulating medical devices are also known for treating a varietyof conditions.

Currently available IMDs, including ICDs and implantable pulsegenerators (IPGs), are typically formed having a metallic housing thatis hermetically sealed and, therefore, is impervious to body fluids, anda header or connector assembly mounted to the housing for makingelectrical and mechanical connection with one or more leads. Suchdevices also possess telemetry capabilities for communicating withexternal devices. Over the past 20 years, IMDs have evolved fromrelatively bulky devices to complex miniaturized devices that exhibitincreasing functionality. For example, numerous improvements have beenmade in cardioversion/defibrillation leads and electrodes that haveenabled the cardioversion/defibrillation energy to be preciselydelivered to selected one or more portions of upper and lower heartchambers. The high voltage output circuitry has also been improved inmany respects to provide monophasic, biphasic, or multi-phasecardioversion/defibrillation shock or pulse waveforms that areefficacious, sometimes with particular combinations ofcardioversion/defibrillation electrodes.

The miniaturization of IMDs is driving size and cost reduction of allIMD components, including the electronic circuitry components, where itis desirable to increase the density and reduce the size of suchcomponents so that the overall circuitry can be more compact. As thedimensions of IMDs decrease, the electronic circuits of the IMDs areformed as integrated circuits to fit within a minimal space.Furthermore, as the dimensions of the components are also being reduced,it is desirable to improve the use of the available space within the IMDpackage.

Electronic circuitry for IMDs and other electronic devices can includeone or more capacitors. Such capacitors are passive components thatstore potential energy in an electric field and are designed to addcapacitance to circuits. Various types of capacitors can be utilized,including ceramic and electrolytic capacitors. Tantalum capacitors are atype of electrolytic capacitor that have a relatively high capacitancedensity compared to other capacitors such as ceramic capacitors.

SUMMARY

The techniques of this disclosure generally relate to electricalcomponents and methods for forming such electrical components. In one ormore embodiments, an electrical component can include tantalum materialdisposed within a cavity of a substrate, a cathode electrode disposedover the cavity, and an anode electrode disposed on a major surface ofthe substrate and over the cavity. The tantalum material can includetantalum particles. The electrical component can include a dielectricdisposed on the tantalum particles and an electrolyte cathode layerdisposed on the dielectric. The anode electrode can include a conductivefoil layer disposed on the major surface of the substrate and over thecavity. In one or more embodiments, the electrical component can form acapacitor that can be utilized in any suitable electronic circuit ordevice.

In one example, aspects of this disclosure relate to an electricalcomponent that includes a substrate having a first major surface, asecond major surface, and a cavity disposed in the substrate extendingbetween the first major surface and the second major surface. Theelectrical component also includes an anode electrode that includes aconductive foil layer disposed on the second major surface of thesubstrate and over the cavity. Tantalum material is disposed within thecavity and includes tantalum particles. A dielectric layer is disposedon the tantalum particles, and an electrolyte cathode layer is disposedon the dielectric layer. The electrical component also includes acathode electrode is disposed over the cavity.

In another example, aspects of this disclosure relate to a method thatincludes providing a substrate having a first major surface and a secondmajor surface, disposing a conductive foil layer on the second majorsurface of the substrate, disposing a cavity in the first major surfaceof the substrate, the cavity extends between the first major surface ofthe substrate and the conductive foil layer, disposing tantalum materialin the cavity, the tantalum material comprising tantalum particles, anddisposing a cathode electrode over the cavity.

All headings provided herein are for the convenience of the reader andshould not be used to limit the meaning of any text that follows theheading, unless so specified.

The terms “comprises” and variations thereof do not have a limitingmeaning where these terms appear in the description and claims. Suchterms will be understood to imply the inclusion of a stated step orelement or group of steps or elements but not the exclusion of any otherstep or element or group of steps or elements.

In this application, terms such as “a,” “an,” and “the” are not intendedto refer to only a singular entity but include the general class ofwhich a specific example may be used for illustration. The terms “a,”“an,” and “the” are used interchangeably with the term “at least one.”The phrases “at least one of” and “comprises at least one of” followedby a list refers to any one of the items in the list and any combinationof two or more items in the list.

The phrases “at least one of” and “comprises at least one of” followedby a list refers to any one of the items in the list and any combinationof two or more items in the list.

As used herein, the term “or” is generally employed in its usual senseincluding “and/or” unless the content clearly dictates otherwise.

The term “and/or” means one or all of the listed elements or acombination of any two or more of the listed elements.

As used herein in connection with a measured quantity, the term “about”refers to that variation in the measured quantity as would be expectedby the skilled artisan making the measurement and exercising a level ofcare commensurate with the objective of the measurement and theprecision of the measuring equipment used. Herein, “up to” a number(e.g., up to 50) includes the number (e.g., 50).

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range as well as the endpoints (e.g., 1to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, 5, etc.).

The details of one or more aspects of the disclosure are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the techniques described in this disclosurewill be apparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-section view of one embodiment of anelectrical component.

FIG. 2 is a schematic flow diagram of a process for forming theelectrical component of FIG. 1.

FIG. 3 is a schematic diagram of an implantable medical device includingthe electrical component of FIG. 1.

DETAILED DESCRIPTION

The techniques of this disclosure generally relate to electricalcomponents and methods for forming such electrical components. In one ormore embodiments, the electrical component can include tantalum materialincluding tantalum particles disposed within a cavity of a substrate, adielectric layer disposed on the tantalum particles, an electrolytecathode layer disposed on the dielectric layer, a cathode electrodedisposed over the cavity, and an anode electrode disposed on a majorsurface of the substrate and over the cavity. The anode electrode caninclude a conductive foil layer disposed on the major surface of thesubstrate and over the cavity. In one or more embodiments, theelectrical component can form a capacitor that can be utilized in anysuitable electronic circuit or device.

In general, the present disclosure provides various embodiments ofapparatuses, systems, and associated techniques that relate toelectrical components. Such electrical components can include anysuitable components or circuitry, e.g., capacitors, tantalum capacitors,etc. Tantalum capacitors can be desirable for their reliability andcapacitance density. Because of their dimensions, tantalum capacitorsare typically disposed on surfaces of integrated circuit boards. Atthicknesses greater than 1 mm, typical tantalum capacitors addsignificantly to the size and thickness of these integrated circuitboards.

One or more embodiments of electrical components described herein canhave a thickness, e.g., of no greater than 600 micrometers. Because ofthis decreased thickness, one or more electrical components describedherein can be embedded within an integrated circuit board or integratedinto a substrate, thereby enabling smaller electronic packages andassemblies.

FIG. 1 is a schematic cross-section view of one embodiment of anelectrical component 100. Electrical component 100 includes a substrate104 having a first major surface 116, a second major surface 118, and acavity 117 disposed in the substrate and extending between the firstmajor surface 116 and the second major surface 118. The electricalcomponent 100 also includes an anode electrode 102 including aconductive foil layer 126 disposed on the second major surface 118 ofthe substrate 104 and over the cavity 117. The electrical component 100also includes tantalum material 114 disposed within the cavity 117,where the tantalum material includes tantalum particles 120. Further,the electrical component 100 includes a dielectric layer 122 disposed onthe tantalum particles 120, an electrolyte cathode layer 124 disposed onthe dielectric layer 122, and a cathode electrode 106 disposed over thecavity 117.

The electrical component 100 can be utilized in any suitable device orelectrical circuitry, e.g., printed circuit boards, integrated circuitpackages, substrates, glass substrates, ceramic substrates, sapphiresubstrates, silicon substrates, etc. Further, the electrical component100 can exhibit any suitable characteristics. For example, theelectrical component 100 can include any suitable amount of tantalum byvolume of the electrical component. Further, the electrical component100 can have any suitable dimensions. In one or more embodiments, theelectrical component 100 can have a height or thickness as measured in adirection orthogonal to the first and second major surfaces 116, 118 ofthe substrate 104 of no greater than 500 micrometers.

The substrate 104 can include any suitable material or materials, e.g.,silicon, N-type silicon, sapphire, glass, ceramic, alumina, etc. In oneor more embodiments, the substrate 104 is silicon. The substrate 104 caninclude any suitable dimensions and take any suitable shape. In one ormore embodiments, the substrate 104 may have a height or thicknessextending between the first major surface 116 and the second majorsurface 118 of at least 50 micrometers and no greater than 300micrometers. In one or more embodiments, the thickness of the substrate104 extending between the first major surface 116 and the second majorsurface 118 may be no greater than 500 micrometers. For example, thethickness of the substrate 104 may be equal to or less than 500micrometers, equal to or less than 450 micrometers, equal to or lessthan 400 micrometers, equal to or less than 450 micrometers, equal to orless than 400 micrometers, equal to or less than 350 micrometers, equalto or less than 300 micrometers, equal to or less than 250 micrometers,equal to or less than 200 micrometers, equal to or less than 150micrometers, or equal to or less than 100 micrometers.

The cavity 117 is disposed in the substrate 104 and extends between thefirst major surface 116 and the second major surface 118 of thesubstrate. The cavity 117 can include any suitable dimensions and takeany suitable shape or shapes. Further, the cavity 117 can be disposed inthe substrate 104 using any suitable technique or techniques, e.g., wetetching, dry etching, mechanical etching, laser etching, etc. Althoughillustrated as including one cavity 117, the electrical component 100can include any suitable number of cavities.

Disposed within the cavity 117 is the tantalum material 114, which fillsat least a portion of the cavity. In one or more embodiments, the sizeand shape of the tantalum material 114 is determined by the size andshape of cavity 117. Tantalum material 114 includes tantalum particles120. The tantalum particles 120 may be bonded tantalum particles. Anysuitable tantalum particles 120 can be utilized in the tantalum material114. Further, the tantalum particles 120 can have any suitabledimensions. The tantalum particles 120 can be electrically andmechanically coupled together or bonded using any suitable technique ortechniques. In one or more embodiments, the tantalum particles 120 canbe sintered together using any suitable technique or techniques, e.g.,heating, laser, microwave, spark plasma, etc. Further, the tantalummaterial 114 can be disposed within the cavity 117 using any suitabletechnique or techniques, e.g., deposition, printing, stencil printing,dispensing, jetting, etc. In one or more embodiments, the tantalummaterial 114 can include tantalum paste. Such tantalum paste can includeany suitable binding agents, e.g., organic binders, solvents, etc.

The tantalum material 114 can further include a dielectric layer 122disposed on a surface of one or more of the tantalum particles 120. Inone or more embodiments, the dielectric layer 122 can be disposed onsurfaces of substantially all of the tantalum particles 120. Thedielectric layer 122 can include any suitable dielectric material ormaterials, e.g., tantalum pentoxide (Ta2O5). Further, the dielectriclayer 122 can be formed using any suitable technique or techniques,e.g., anodization, wet-forming, atomic layer deposition, annealing, etc.

Further, the tantalum material 114 can also include an electrolytecathode layer 124 disposed on the dielectric layer 122. The electrolytecathode layer 124 can include any suitable material or materials, e.g.,manganese dioxide, conductive polymer, etc. Further, the electrolytecathode layer 124 can include any suitable dimensions and take anysuitable shape or shapes. The electrolyte cathode layer 124 can beformed using any suitable technique or techniques, e.g., pyrolysis,impregnation, printing.

The electrical component 100 can also include the anode electrode 102,which is disposed on the second major surface 118 of the substrate 104and over the cavity 117. The anode electrode 102 can include anysuitable electrically conductive material or materials, e.g., copper,gold, silver, tantalum, graphite, aluminum, chrome, carbon, etc. Theanode electrode 102 can include any suitable dimensions and take anysuitable shape or shapes. Further, the anode electrode 102 can be formedusing any suitable technique or techniques, e.g., deposition, chemicalvapor deposition (CVD), physical vapor deposition (PVD), sputtering,electroplating, printing, dispensing, sintering, lasering, pressing,etc.

The anode electrode 102 can include one or more layers. In one or moreembodiments, the anode electrode 102 can include a conductive foil layer126 disposed on the second major surface 118 of the substrate 104 andover the cavity 117. The conductive foil layer 126 can include anysuitable dimensions and take any suitable shape or shapes. Theconductive foil layer 126 can include any suitable material ormaterials, e.g., tantalum, titanium, doped silicon, or other conductivematerial. In one or more embodiments, the conductive foil layer 126 is atantalum foil layer. The conductive foil layer 126 can be formed usingany suitable technique or techniques, e.g., pressing, sintering,lasering, etc. The conductive foil layer 126 can have a thickness in arange of at least 10 micrometers and no greater than 25 micrometers.

In one or more embodiments, the anode electrode 102 can also include ananode conductor layer 128 disposed on the conductive foil layer 126. Theanode conductor layer 128 can also include any suitable dimensions andtake any suitable shape or shapes. The anode conductor layer 128 can beformed using any suitable technique or techniques, e.g., deposition,PVD, CVD, sputtering, electroplating, foil lamination, etc. The anodeconductor layer 128 can include any suitable electrically conductivematerial or materials, e.g., copper, gold, silver, aluminum, or otherconductive material.

In one or more embodiments, a tantalum layer 130 can be disposed betweenthe tantalum material 114 and the anode electrode 102. The tantalumlayer 130 can be disposed using any suitable technique or techniques,e.g., deposition, chemical vapor deposition, physical vapor deposition,sputtering, electroplating, printing, dispensing, etc. In one or moreembodiments, the tantalum layer 130 has a thickness of at least 1micrometer and no greater than 2 micrometers. In one or moreembodiments, the tantalum layer 130 can be sintered to the tantalumparticles 120 and the conductive foil layer 126. In one or moreembodiments, the tantalum layer 130 can further be disposed on surfacesof the cavity 117 and the first major surface 116 of the substrate 104.The tantalum layer 130 can have a thickness of at least 500 nanometersand no greater than 2 micrometers.

Disposed on the tantalum layer 130 and over the cavity 117 of thesubstrate 104 is the cathode electrode 106. The cathode electrode 106can include any suitable dimensions and take any suitable shape orshapes. The cathode electrode 106 can include any suitable electricallyconductive material or materials, e.g., the same electrically conductivematerials described herein regarding the anode electrode 102. Further,the cathode electrode 106 can include any suitable number of layers. Thecathode electrode 106 can be formed using any suitable technique, e.g.,the same technique or techniques described herein regarding the anodeelectrode 102.

In one or more embodiments, the cathode electrode 106 can include acathode connection layer 110 disposed on the tantalum layer 130 and overthe cavity 117 of the substrate 104. The cathode connection layer 110can include any suitable electrically conductive material or materials,e.g., the same electrically conductive materials described hereinregarding the anode electrode 102. Further, the cathode connection layer110 can include any suitable dimensions and take any suitable shape orshapes. The cathode connection layer 110 can be formed using anysuitable technique or techniques, e.g., the same technique or techniquesdescribed herein regarding the anode electrode 102.

In one or more embodiments, the cathode electrode 106 can include acathode conductor layer 108 disposed on the cathode connection layer110. The cathode conductor layer 108 can include any suitableelectrically conductive material or materials, e.g., the sameelectrically conductive materials described herein regarding the anodeelectrode 102. Further, the cathode conductor layer 108 can include anysuitable dimensions and take any suitable shape. The cathode conductorlayer 108 can be formed using any suitable technique or techniques,e.g., the same technique or techniques described herein regarding theanode electrode 102. In one or more embodiments, the cathode conductorlayer 108 can be patterned using any suitable technique or techniques toprovide a patterned conductive layer.

The electrical component 100 can be manufactured utilizing any suitabletechnique or techniques. For example, FIG. 2 is a schematic flow diagramof one embodiment of a method 200 of forming a plurality of electricalcomponents 100. Although described in reference to electrical component100 of FIG. 1, the method 200 can be utilized to form any suitableelectrical component.

At 202, the substrate 104 is provided. The substrate 104 includes thefirst major surface 116 and the second major surface 118.

At 204, the conductive foil layer 126 can be disposed on the secondmajor surface 118 of the substrate 104 using any suitable technique ortechniques, e.g., sintering, pressing, lasering, diffusion bonding, etc.In one or more embodiments, the conductive foil layer 126 can be pressedor flattened to the second major surface 118 of the substrate 104 whilesintering or diffusion bonding the conductive foil layer to thesubstrate to form the conductive foil layer 126.

At 206, a field oxide hard mask 132 can be disposed on the first majorsurface 116 of the substrate 104. The field oxide hard mask 132 may bedisposed using any suitable technique or techniques, e.g., growing,deposition, sputtering, etc. At 208, one or more portions of the fieldoxide hard mask 132 may be removed and one or more cavities 117 can bedisposed in the first major surface 116 of the substrate 104. The one ormore portions of the field oxide hard mask 132 may be removed using anysuitable technique or techniques, e.g., etching, lasering, etc. The oneor more cavities 117 can be disposed in the first major surface 116 ofthe substrate 104 using any suitable technique or techniques, e.g.,anisotropic-etching, wet-etching, lasering, sawing, etc. In one or moreembodiments, the one or more cavities 117 may be formed usinganisotropic-etching. The one or more cavities 117 may extend between thefirst major surface 116 and the second major surface 118 of thesubstrate 104. The conductive foil layer 126 may be exposed through theone or more cavities 117. At 210, the field oxide hard mask 132 can beremoved from the substrate 104 using any suitable technique ortechniques, e.g., wet etching, dry etching, lasering, etc.

At 212, the tantalum layer 130 can be disposed on surfaces of the one ormore cavities 117 and the tantalum material 114 can be disposed in theone or more cavities. The tantalum layer 130 can be disposed on surfacesof the one or more cavities 117 using any suitable technique ortechniques, e.g., deposition, PVD, CVD, sputtering, electroplating, foillamination, etc. In one or more embodiments, the tantalum layer 130 isdisposed with a thickness of at least 1 micrometer and no greater than 2micrometers. Furthermore, an oxide layer 134 can be disposed on thetantalum layer 130 using any suitable technique or techniques, at 212.In one or more embodiments, the oxide layer 134 may be disposed bygrowing the oxide layer in a diffusion furnace containing water vapor(e.g., wet oxide growth) at a temperature between 1000 degrees Celsiusand 1200 degrees Celsius. In one or more embodiments, the oxide layer134 may be disposed by placing the substrate 104 in an oxygen richenvironment and heating the substrate and the tantalum layer 130. Thesubstrate 104 and tantalum layer 130 may be heated to at least 500degrees Celsius for at least 10 minutes. Subsequent to the oxide layer134 being disposed, the substrate 104, the tantalum layer 130, and theoxide layer 134 may be annealed to drive the oxide layer into thetantalum layer. Annealing may include heating to at least 600 degreesCelsius for at least 10 minutes.

At 212, the tantalum material 114 including the tantalum particles 120can be disposed into the one or more cavities 117 of the substrate 104using any suitable technique or techniques, e.g., printing, pressing,placing, etc. The tantalum material 114 may include, e.g., tantalumpowder, a tantalum slug, tantalum paste, etc. In embodiments where thetantalum material 117 includes tantalum paste, the tantalum paste can bedried and debindered using any suitable technique or techniques at 212,for example, heating the tantalum paste.

In one or more embodiments, the tantalum material 114 can be sintered at212 using any suitable technique or techniques. Sintering the tantalummaterial 114 can cause the tantalum particles 120 to at least partiallyfuse together to form one or more mechanical and electrical connectionsbetween the tantalum particles. Additionally, sintering can cause one ormore of the tantalum particles 114 to fuse to the tantalum layer 130,forming at least one mechanical and electrical connection between thetantalum material and the tantalum layer. In one or more embodiments,the tantalum material 114 can be sintered by heating the material to atemperature of at least 1200 degrees Celsius and no greater than 3000degrees Celsius.

At 214, the dielectric layer 122 can be disposed on the tantalumparticles 120 using any suitable technique or techniques. In one or moreembodiments, the dielectric layer 122 may be disposed using, e.g.,anodization, wet-forming, atomic layer deposition, annealing, etc.

Further, at 214, the electrolyte cathode layer 124 can be disposed onthe dielectric layer 122 using any suitable technique or techniques. Inone or more embodiments, the electrolyte cathode layer 124 may bedisposed using, e.g., pyrolysis, impregnation, printing, dispensing,dip-coating, etc.

At 216, the cathode electrode 106 can be disposed over the one or morecavities 117 using any suitable technique or techniques, e.g.,deposition, PVD, CVD, sputtering, electroplating, foil lamination, etc.In one or more embodiments, the cathode electrode 106 may be disposed onthe electrolyte cathode layer 124 and the tantalum layer 130. Disposingthe cathode electrode 106 can include disposing one or more layers. Forexample, in one or more embodiments, disposing the cathode electrode 106can include disposing the cathode connection layer 110 and the cathodeconductor layer 108. The cathode connection layer 110 can be disposedover the one or more cavities 117 using any suitable technique ortechniques, e.g., deposition, PVD, CVD, sputtering, electroplating, foillamination, etc. The cathode conductor layer 108 can be disposed on thecathode connection layer 110 using any suitable technique or techniques,e.g., deposition, PVD, CVD, sputtering, electroplating, foil lamination,shadow masking, etc.

At 218, the anode conductor layer 128 can be disposed on the conductivefoil layer 126 using any suitable technique or techniques, e.g.,deposition, chemical vapor deposition (CVD), physical vapor deposition(PVD), sputtering, electroplating, printing, dispensing, etc.

The electrical component 100 as described herein can be utilized withany suitable implantable medical devices. For example, FIG. 3 is aschematic diagram of an implantable medical device 300. Implantablemedical device 300 includes a housing 302 and a circuit electronicassembly 304 within the housing. The electronic assembly 304 can includean electrical component 306. The electrical component 306 can includeany suitable electrical component, e.g., the electrical component 100 ofFIG. 1.

The implantable medical device 300 can include any suitable medicaldevice. In one or more embodiments, the implantable medical device 300can include an implantable defibrillator, pacemaker, neurostimulator,etc.

It should be understood that various aspects disclosed herein can becombined in different combinations than the combinations specificallypresented in the description and accompanying drawings. It should alsobe understood that, depending on the example, certain acts or events ofany of the processes or methods described herein can be performed in adifferent sequence, can be added, merged, or left out altogether (e.g.,all described acts or events can not be necessary to carry out thetechniques). In addition, while certain aspects of this disclosure aredescribed as being performed by a single module or unit for purposes ofclarity, it should be understood that the techniques of this disclosurecan be performed by a combination of units or modules associated with,for example, a medical device.

In one or more examples, the described techniques can be implemented inhardware, software, firmware, or any combination thereof. If implementedin software, the functions can be stored as one or more instructions orcode on a computer-readable medium and executed by a hardware-basedprocessing unit. Computer-readable media can include computer-readablestorage media, which corresponds to a tangible medium such as datastorage media (e.g., RAM, ROM, EEPROM, flash memory, or any other mediumthat can be used to store desired program code in the form ofinstructions or data structures and that can be accessed by a computer).

Instructions can be executed by one or more processors, such as one ormore digital signal processors (DSPs), general purpose microprocessors,application specific integrated circuits (ASICs), field programmablelogic arrays (FPGAs), or other equivalent integrated or discrete logiccircuitry. Accordingly, the term “processor” as used herein can refer toany of the foregoing structure or any other physical structure suitablefor implementation of the described techniques. Also, the techniquescould be fully implemented in one or more circuits or logic elements.

All references and publications cited herein are expressly incorporatedherein by reference in their entirety into this disclosure, except tothe extent they may directly contradict this disclosure. Illustrativeembodiments of this disclosure are discussed, and reference has beenmade to possible variations within the scope of this disclosure. Theseand other variations and modifications in the disclosure will beapparent to those skilled in the art without departing from the scope ofthe disclosure, and it should be understood that this disclosure is notlimited to the illustrative embodiments set forth herein. Accordingly,the disclosure is to be limited only by the claims provided below.

What is claimed is:
 1. An electrical component comprising: a substratecomprising: a first major surface; a second major surface; and a cavitydisposed in the substrate and extending between the first major surfaceand the second major surface; an anode electrode comprising a conductivefoil layer disposed on the second major surface of the substrate andover the cavity; tantalum material disposed within the cavity andcomprising tantalum particles; a dielectric layer disposed on thetantalum particles; an electrolyte cathode layer disposed on thedielectric layer; and a cathode electrode disposed over the cavity. 2.The electrical component of claim 1, wherein the cathode electrodecomprises a cathode connection layer comprising carbon material and acathode conductor layer comprising electrically conductive material. 3.The electrical component of claim 1, wherein the anode electrode furthercomprises an anode conductor layer disposed on the conductive foillayer.
 4. The electrical component of claim 1, wherein the substratecomprises silicon.
 5. The electrical component of claim 1, wherein thesubstrate comprises sapphire.
 6. The electrical component of claim 1,wherein the tantalum particles are sintered together.
 7. The electricalcomponent of claim 1, further comprising a tantalum layer disposedbetween the tantalum material and the conductive foil layer.
 8. Theelectrical component of claim 1, wherein the conductive foil layercomprises tantalum.
 9. The electrical component of claim 1, wherein theconductive foil layer comprises titanium.
 10. An integrated circuitpackage comprising the electrical component of claim
 1. 11. A methodcomprising: providing a substrate comprising a first major surface and asecond major surface; disposing a conductive foil layer on the secondmajor surface of the substrate; disposing a cavity in the first majorsurface of the substrate, wherein the cavity extends between the firstmajor surface of the substrate and the conductive foil layer; disposingtantalum material in the cavity, the tantalum material comprisingtantalum particles; and disposing a cathode electrode over the cavity.12. The method of claim 11, further comprising: disposing a field oxidelayer on surfaces of the cavity prior to disposing tantalum material inthe cavity; and annealing the substrate and the field oxide layer priorto disposing tantalum material in the cavity.
 13. The method of claim11, further comprising: disposing a tantalum layer on surfaces of thecavity prior to disposing tantalum material in the cavity; and annealingthe substrate and the tantalum layer prior to disposing tantalummaterial in the cavity.
 14. The method of claim 11, further comprisingsintering the tantalum particles prior to disposing the cathodeelectrode.
 15. The method of claim 11, wherein disposing the cavity inthe first major surface of the substrate comprises wet-etching thesubstrate to form the cavity.
 16. The method of claim 11, furthercomprising: disposing a dielectric on surfaces of the tantalum particlesprior to disposing the cathode electrode; and disposing an electrolytecathode layer in spaces between the tantalum particles prior todisposing the cathode electrode.
 17. The method of claim 16, whereindisposing the electrolyte cathode layer comprises disposing a conductivepolymer in vacuum conditions.
 18. The method of claim 11, furthercomprising disposing an anode conductor layer on the conductive foillayer.
 19. The method of claim 11, wherein disposing the conductive foillayer comprises sintering the conductive foil layer to the second majorsurface of the substrate.
 20. The method of claim 19, wherein disposingthe conductive foil layer further comprises flattening the conductivefoil layer against the substrate while diffusion bonding the conductivefoil layer to the substrate.